Тип публикации: статья из журнала

Год издания: 1998

Аннотация: Defect formation in II-VI semiconductors bombarded with low-energy ions (2-9 keV) was studied by electron microscopy. Ion bombardment was found to give rise to the formation of point-defect accumulations at depths an order of magnitude greater than the projected range of the ions. The long-range effect of ion bombardment was revealПоказать полностьюed in both the Ar+ and I+ ion milling processes.

Журнал: Inorganic Materials

Выпуск журнала: Vol. 34, Is. 9

Номера страниц: 961-965

ISSN журнала: 00201685

Место издания: New York

Издатель: Maik Nauka/Interperiodica

• Loginov Yu.Yu. (Krasnoyarsk State University)
• Brown P.D. (Dept. of Mat. Science and Metallurgy,University of Cambridge)

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