Тип публикации: статья из журнала

Год издания: 2024

Идентификатор DOI: 10.1134/S0031918X24601975

Ключевые слова: Manganese germanides, thin films, magnetic properties, transport properties

Аннотация: The effect of the Mn_<i>x</i>Ge_<i>y</i> buffer layer on the morphology, transport and magnetic properties of Mn₅Ge₃ thin films grown on substrates Si(111) has been studied. Using X-ray diffraction analysis and atomic force microscopy, it has been found that changing the thickness and structure of the buffer layer with a gradient Mn_<i>x</i>Ge_<i>y</i> composition has made it possible to control the crystalline quality and smoothness of epitaxial films. Changes in the microstructure and surface roughness has not affected the temperature of the phase transitions revealed from the temperature dependences of the resistivity and magnetization at 75 and 300 K. It has been shown that the features of the magnetization curve shape for films with different buffer layers have been closely related to the inhomogeneity of the films in thickness and surface roughness while maintaining the micromagnetic constants and orientation of the easy magnetization axis. The value of the change in the magnetic part of entropy Δ<i>S</i> has been calculated to be 2.1 J kg^–1 K^–1 at 1 T, which is comparable with the value for gadolinium and exceeds that for Mn₅Ge₃(001) films grown on GaAs substrates.

Журнал: Physics of Metals and Metallography

Выпуск журнала: Т. 125, № 12

Номера страниц: 1331-1340

ISSN журнала: 0031918X

Место издания: Екатеринбург

Издатель: Pleiades Publishing, Ltd. (Плеадес Паблишинг, Лтд)

• Rautskii M.V. (Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences)
• Lukyanenko A.V. (Siberian Federal University)
• Komogortsev S.V. (Reshetnev Siberian State University of Science and Technology)
• Sobolev I.A. (Siberian Federal University)
• Shanidze L.V. (Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences)
• Bondarev I.A. (Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences)
• Bondarev M.A. (Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences)
• Eremin E.V. (Reshetnev Siberian State University of Science and Technology)
• Yakovlev I.A. (Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences)
• Sukhachev A.L. (Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences)
• Molokeev M.S. (Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences)
• Solovyov L.A. (Institute of Chemistry and Chemical Engineering, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences)
• Varnakov S.N. (Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences)
• Ovchinnikov S.G. (Siberian Federal University)
• Volkov N.V. (Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences)
• Tarasov A.S. (Siberian Federal University)

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