Тип публикации: статья из журнала
Год издания: 2025
Идентификатор DOI: 10.1134/S0040579525700046
Ключевые слова: Porous silicon structures, electrochemical etching, additional irradiation sources, electrochemical cell, photoluminescence of porous silicon structures, photoluminescence spectra of porous silicon in the visible spectral range
Аннотация: This work focuses on the effect of different additional irradiation sources on the optical properties of porous silicon. Samples were obtained using the standard electrochemical anodization (etching) technique in a hydrofluoric acid solution from monocrystalline silicon wafers. Differences were observed in the photoluminescence speПоказать полностьюctra of three series of samples subjected to different spectral irradiation. The results show that by using various types of additional light sources during the electrochemical etching process, the photoluminescence spectrum peak of porous silicon can be tuned within the wavelength range of 400–850 nm.
Журнал: Theoretical Foundations of Chemical Engineering
Выпуск журнала: Т. 59, № 1
Номера страниц: 20-23
ISSN журнала: 00405795
Место издания: Москва
Издатель: Pleiades Publishing, Ltd. (Плеадес Паблишинг, Лтд)