Thickness Effect on Structural, Electrical, and Optical Properties of Ultrathin Platinum Films

Описание

Тип публикации: статья из журнала

Год издания: 2025

Идентификатор DOI: 10.3390/molecules30244794

Аннотация: <jats:p>Owing to the fact that ultrathin platinum films have many practical applications, the information concerning the initial stage of the formation of these films raises considerable interest. The effect of the film thickness on the morphology, as well as on the electrical and optical properties, was experimentally studied by aПоказать полностьюcombination of methods (TEM, SAED, SEM, AFM, optical spectrophotometry, and electrical resistance measurements). The growth mechanisms of the films with an average thickness from 0.2 to 20 nm were determined, which is equivalent to the thickness of 1 to 100 monolayers (ML). The percolation threshold was reached, with the average film thickness being ≈1.0 nm, when electrical conductivity appeared. With an average thickness of ≈2.0 nm, the platinum films became almost continuous. The obtained data were analyzed within the framework of scaling theory. The growth of the platinum films at the initial stage (0.2–2.0 nm) was shown to proceed in the mixed 2D/3D growth mode. Here, 3D nanoislands, having a crystalline structure, were formed simultaneously with the formation of an almost continuous 2D subnanometer layer possessing an amorphous-like structure.</jats:p>

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Издание

Журнал: Molecules

Выпуск журнала: Т. 30, 24

Номера страниц: 4794

ISSN журнала: 14203049

Издатель: MDPI

Персоны

  • Altunin Roman R. (Siberian Federal University, 79 Svobodny Ave., 660041 Krasnoyarsk, Russia)
  • Moiseenko Evgeny T. (Siberian Federal University, 79 Svobodny Ave., 660041 Krasnoyarsk, Russia)
  • Nemtsev Ivan V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, 660036 Krasnoyarsk, Russia)
  • Lukyanenko Anna V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, 660036 Krasnoyarsk, Russia)
  • Rautskii Mikhail V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, 660036 Krasnoyarsk, Russia)
  • Tarasov Anton S. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, 660036 Krasnoyarsk, Russia)
  • Gerasimov Valeriy S. (Institute of Computational Modelling SB RAS, Akademgorodok 50/44, 660036 Krasnoyarsk, Russia)
  • Belousov Oleg V. (Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Akademgorodok 50/24, 660036 Krasnoyarsk, Russia)
  • Zharkov Sergey M. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, 660036 Krasnoyarsk, Russia)

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